View Full Version : (PR) Hynix Introduces the Second Generation 1Gb DDR3

10-12-2009, 09:08 AM
Hynix Semiconductor, Inc. has announced the second generation 1Gb (Gigabits) DDR3 using 54nm process technology. Hynix's new 1Gb DDR3, offered in x4 (H5TQ1G43TFR) and x8 (H5TQ1G83TFR) organizations, has innovative design modifications that significantly reduce power consumption of the device.

The new product operates at 1.5V (volts) power supply as the existing 1Gb DDR3 product and further reduces power consumption by 30% over the existing one. This second generation product is the highest performing memory in the industry among 1Gb density category which is the mainstream of the products. According to the iSuppli, a market research firm, the portion of the world wide 1Gb DDR3 is currently estimated to be 87%. The iSuppli estimates that higher densities will become the mainstream when it is expected to account for more than 50% in 2011.

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